? semiconductor components industries, llc, 2003 october, 2003 ? rev. 2 1 publication order number: MJE15032/d MJE15032 (npn), mje15033 (pnp) preferred devices complementary silicon plastic power transistors designed for use as high?frequency drivers in audio amplifiers. ? dc current gain specified to 5.0 amperes h fe = 70 (min) @ i c = 0.5 adc = 10 (min) @ i c = 2.0 adc ? collector?emitter sustaining voltage ? v ceo(sus) = 250 vdc (min) ? MJE15032, mje15033 ? high current gain ? bandwidth product f t = 30 mhz (min) @ i c = 500 madc ? to?220ab compact package ? epoxy meets ul94, v0 @ 1/8 ? esd ratings: machine model c human body model 3b ???????????????????? ???????????????????? maximum ratings ???????????? ? ?????????? ? ???????????? rating ??? ? ? ? ??? symbol ???? ? ?? ? ???? MJE15032 mje15033 ???? ? ?? ? ???? unit ???????????? ???????????? collector?emitter voltage ??? ??? v ceo ???? ???? 250 ???? ???? vdc ???????????? ???????????? collector-base voltage ??? ??? v cb ???? ???? 250 ???? ???? vdc ???????????? ???????????? emitter-base voltage ??? ??? v eb ???? ???? 5.0 ???? ???? vdc ???????????? ? ?????????? ? ???????????? collector current ? continuous ? peak ??? ? ? ? ??? i c ???? ? ?? ? ???? 8.0 16 ???? ? ?? ? ???? adc ???????????? ???????????? base current ??? ??? i b ???? ???? 2.0 ???? ???? adc ???????????? ???????????? total power dissipation @ t c = 25 c derate above 25 c ??? ??? p d ???? ???? 50 0.40 ???? ???? watts w/ c ???????????? ? ?????????? ? ???????????? total power dissipation @ t a = 25 c derate above 25 c ??? ? ? ? ??? p d ???? ? ?? ? ???? 2.0 0.016 ???? ? ?? ? ???? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ??? ? ? ? ??? t j , t stg ???? ? ?? ? ???? 65 to + 150 ???? ? ?? ? ???? c ???????????????????? ???????????????????? thermal characteristics ???????????? characteristic ??? symbol ???? max ???? unit ???????????? ???????????? thermal resistance, junction to case ??? ??? r q jc ???? ???? 2.5 ???? ???? c/w ???????????? ???????????? thermal resistance, junction to ambient ??? ??? r q ja ???? ???? 62.5 ???? ???? c/w device package shipping ordering information MJE15032 to?220 to?220 case 221a style 1 50 units/rail preferred devices are recommended choices for future use and best overall value. marking diagram mje1503x = specific device code x = 2 or 3 a = assembly location y = year ww = work week mje15033 to?220 50 units/rail http://onsemi.com 8.0 amperes power transistors complementary silicon 250 volts 50 watts 1 2 3 4 ayww mje 1503x
MJE15032 (npn), mje15033 (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter sustaining voltage (note 1) (i c = 10 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 250 ???? ? ?? ? ???? ? ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v cb = 250 vdc, i e = 0) ????? ????? i cbo ??? ??? - ???? ???? 10 ??? ??? adc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ? ???? ? ?? ? ???? 10 ??? ? ? ? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 0.5 adc, v ce = 5.0 vdc) (i c = 1.0 adc, v ce = 5.0 vdc) (i c = 2.0 adc, v ce = 5.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 70 50 10 ???? ? ?? ? ? ?? ? ???? ? ? ? ??? ? ? ? ? ? ? ??? ? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter saturation voltage (i c = 1.0 adc, i b = 0.1 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ? ???? ? ?? ? ???? 0.5 ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? base-emitter on voltage (i c = 1.0 adc, v ce = 5.0 vdc) ????? ????? v be(on) ??? ??? - ???? ???? 1.0 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? current gain ? bandwidth product (note 2) (i c = 500 madc, v ce = 10 vdc, f test = 1.0 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 30 ???? ? ?? ? ???? ? ??? ? ? ? ??? mhz 1. pulse test: pulse width 300 s, duty cycle 2.0%. 2. f t = ? h fe ?? f test .
MJE15032 (npn), mje15033 (pnp) http://onsemi.com 3 t, time (ms) 0.01 0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal z q jc(t) = r(t) r q jc r q jc = 2.5 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 single pulse resistance (normalized) figure 1. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.02 100 200 0.1 0.02 0.01 250ms 100 m s 50ms 10ms 100 1.0 figure 2. MJE15032 & mje15033 safe operating area v ce , collector-emitter voltage (volts) 10 0.01 i c , collector current (amps) 10 1000 1.0 100 0.1 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. the data of figures 2 and 4 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 1. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0 figure 3. power derating t, temperature ( c) 0 40 60 100 120 160 40 t c 20 60 p d , power dissipation (watts) 0 2.0 t a 1.0 3.0 80 140 t c t a 20
MJE15032 (npn), mje15033 (pnp) http://onsemi.com 4 25 c 150 c -55 c 1000 0.1 figure 4. npn ? MJE15032 v ce = 5 v dc current gain i c , collector current (amps) 1.0 h fe , dc current gain 10 100 10 1.0 figure 5. pnp ? mje15033 v ce = 5 v dc current gain figure 6. npn ? MJE15032 v ce = 5 v v be(on) curve i c , collector current (amps) 1.0 10 1.0 10 v, voltage (volts) 0.1 0.1 figure 7. pnp ? mje15033 v ce = 5 v v be(on) curve i c , collector current (amps) 10 v, voltage (volts) 1.0 10 0.1 0.1 1.0 npn ? MJE15032 pnp ? mje15033 25 c 150 c -55 c 25 c 150 c -55 c 1000 0.1 i c , collector current (amps) 1.0 h fe , dc current gain 10 100 10 1.0 25 c 150 c -55 c i c , collector current (amps) i c , collector current (amps) v, voltage (volts) figure 8. npn ? MJE15032 v ce ( sat ) i c /i b = 10 figure 9. pnp ? mje15033 v ce ( sat ) i c /i b = 10 1.0 10 10 0.1 0.1 0.01 1.0 100 1.0 0.1 0.01 v, voltage (volts) 10 0.1 1.0 10 25 c 150 c -55 c 25 c 150 c -55 c
MJE15032 (npn), mje15033 (pnp) http://onsemi.com 5 0.1 i c , collector current (amps) 100 10 1.0 0.1 0.01 v, voltage (volts) npn ? MJE15032 pnp ? mje15033 v, voltage (volts) figure 10. npn ? MJE15032 v ce(sat) i c /i b = 20 figure 11. pnp ? mje15033 v ce(sat) i c /i b = 20 10 1.0 0.1 i c , collector current (amps) 10 1.0 0.1 v figure 12. npn ? MJE15032 v be(sat) i c /i b = 10 figure 13. pnp ? mje15033 v be(sat) i c /i b = 10 10 1.0 25 c 150 c -55 c i c , collector current (amps) 100 1.0 0.1 0.01 10 0.1 1.0 10 25 c 150 c -55 c , base emitter voltage (volts) be 0.1 i c , collector current (amps) 10 1.0 0.1 v 10 1.0 , base emitter voltage (volts) be 25 c 150 c -55 c 25 c 150 c -55 c
MJE15032 (npn), mje15033 (pnp) http://onsemi.com 6 package dimensions to?220 case 221a?09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MJE15032/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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